About
FinScale has invented and launched its breakthrough Quantum FinFET technology to enable future generations of smart phones, mobile devices and infrastructure, including the Internet of Things, by making the foundation technology faster, tighter and cooler. Available now and branded as qFinFET(TM) technology, FinScale's scalable, patented 3D MOSFET device & manufacturing process intellectual property surpasses offerings of chip industry leaders in performance, die size, power, and cost. At the same manufacturing node, using the same materials, process modules and design rules, chips made using qFinFET technology can be significantly faster, 30% smaller and consume 90% less leakage current, thanks to a unique device architecture and innovative process. FinScale’s founders set out to design the ultimate MOSFET of the Silicon Era and after two years of extensive research and development qFinFET is ready to license, transfer and commercialize, supported by FinScale's expert services.